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CPH6318 Dataheets PDF



Part Number CPH6318
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description High-Speed Switching Applications
Datasheet CPH6318 DatasheetCPH6318 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN7212 CPH6318 P-Channel Silicon MOSFET CPH6318 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6318] 6 5 4 0.6 0.05 Low ON-resistance. High-speed switching. 1.8V drive. 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID.

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www.DataSheet4U.com Ordering number : ENN7212 CPH6318 P-Channel Silicon MOSFET CPH6318 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6318] 6 5 4 0.6 0.05 Low ON-resistance. High-speed switching. 1.8V drive. 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Mounted on a FR4 board PW≤5s Conditions 0.4 0.7 0.9 0.2 3 0.95 0.6 1.6 2.8 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings --12 ±8 --6 --24 1.6 2.0 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0 VDS=--12V, VGS=0 VGS=± 6.4V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=-3A ID=-3A, VGS=--4.5V ID=-1.5A, VGS=--2.5V ID=-0.5A, VGS=--1.8V Ratings min --12 --10 ± 10 --0.3 7.7 11 26 36 50 34 50 75 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : JU Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41002 TS IM TA-3483 No.7212-1/4 0.2 2.9 0.15 CPH6318 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-6V, VGS=-4.5V, ID=--6A VDS=-6V, VGS=-4.5V, ID=--6A VDS=-6V, VGS=-4.5V, ID=--6A IS=--6A, VGS=0 Ratings min typ 1900 440 360 28 170 190 170 22 3.0 7.0 --0.86 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V PW=10µs D.C.≤1% VIN ID= --3A RL=2.0Ω D VOUT G 50Ω P.G S CPH6318 --6 ID -- VDS V --3.0 --6 ID -- VGS VDS= --6V --2 . 5V --3. 5 V --5 --1 .8V Drain Current, ID -- A --5 Drain Current, ID -- A 5 --1. V --3 --4.5 --4 --4 V --3 --2 --2 5°C --1 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 IT04303 0 --0.2 --0.4 --0.6 --0.8 --1.0 --2 5°C --1.2 --1.4 VGS= --1.0V Ta= 7 25°C --1.6 --1.8 --2.0 Drain-to-Source Voltage, VDS -- V 80 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 80 IT04304 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 70 60 50 40 30 20 10 0 --60 --3.0A 60 ID= --1.5A 50 40 30 20 10 0 0 --1 --2 --3 --4 --5 --6 --7 --8 V --1.8 S= VG , A --0.5 I D= --2.5V S= VG , A 1.5 I D= -V = --4.5 .0A, V GS 3 -= ID --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT04305 Ambient Temperature, Ta -- °C IT04306 No.7212-2/4 CPH6318 3 yfs -- ID VDS= --6V --10 7 5 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 Forward Current, IF -- A 10 7 5 3 2 Ta 3 2 °C -25 =- --1.0 7 7 5°C 25° C Ta=75 °C --0.4 --0.6 5 3 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 10 IT04307 7 --0.1 --0.2 25°C --25°C --0.8 --1.0 --1.2 IT04308 Drain Current, ID -- A 1000 7 SW Time -- ID Switching Time, SW Time -- ns 5 3 2 VDD= --6V VGS= --4.5V Ciss, Coss, Crss -- pF td(off) tf 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Ciss 1000 7 5 3 2 100 7 5 3 2 tr Coss td(on) Crss 10 --0.1 100 2 3 5 7 --1.0 2 3 5 7 --10 0 --2 --4 --6 --8 --10 --12 IT04310 Drain Current, ID -- A --4.5 --4.0 IT04309 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 VGS -- Qg VDS= --6V ID= --6A Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V ASO IDP= --24A ID= --6A DC op .


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