High Gain HBT Amplifier
www.DataSheet4U.com
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
Product Features
• 400 – 2300 ...
Description
www.DataSheet4U.com
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
Product Features
400 – 2300 MHz +31.5 dBm P1dB +46 dBm Output IP3 18 dB Gain @ 900 MHz Single Positive Supply (+5 V) Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Product Description
The AH215 / ECP100 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free/green/RoHScompliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH215 / ECP100 to maintain high linearity over temperature and operate directly off a +5 V supply.
Functional Diagram
1 8 7 6 5
2 3
4
Applications
Final stage amplifiers for Repeaters Mobile Infrastructure Defense / Homeland Security
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
Typical Performance (4)
Units Min
MHz MHz dB dB dB dBm dBm d...
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