HY62VF08401C

www.DataSheet4U.com HY62VF08401C Series 256Kx16bit full CMOS SRAM Document Title 512K x 8bit 3.0 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 01 Initial Draft Changed Logo Dec.18.2000 Mar.23.2001 Final Final 02 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 / Jun.01 Hynix Semiconductor HY62VF08401C Series DESCRIPTION The HY62VF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62VF08401C uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.2V(min) data retention Standard pin configuration -. 32 - sTSOP - 8X13.4(Standard) Product No. HY62VF08401C-I Voltage (V) 3.0~3.6 Speed (ns) 55/70 Operation Current/Icc(mA) 5 Standby Current(uA) LL SL 15 6 Temperature (°C) -40~85 Note 1. I : Industrial 2. Current value is max. PIN CONNECTION A11 A9 A8 A13 /WE A18 A15 VCC A17 A16 A14 A12 A7 A6 A5...