256Kx16bit full CMOS SRAM
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HY62VF08401C Series
256Kx16bit full CMOS SRAM
Document Title
512K x 8bit 3.0 ~ 3.6V Super low Powe...
Description
www.DataSheet4U.com
HY62VF08401C Series
256Kx16bit full CMOS SRAM
Document Title
512K x 8bit 3.0 ~ 3.6V Super low Power FCMOS Slow SRAM
Revision History
Revision No History Draft Date Remark
00 01
Initial Draft Changed Logo
Dec.18.2000 Mar.23.2001
Final Final
02
Changed Isb1 values
Jun.07.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 / Jun.01 Hynix Semiconductor
HY62VF08401C Series
DESCRIPTION
The HY62VF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62VF08401C uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.2V(min) data retention Standard pin configuration -. 32 - sTSOP - 8X13.4(Standard)
Product No. HY62VF08401C-I
Voltage (V) 3.0~3.6
Speed (ns) 55/70
Operation Current/Icc(mA) 5
Standby Current(uA) LL SL 15 6
Temperature (°C) -40~85
Note 1. I : Industrial 2. Current value is max.
PIN CONNECTION
A11 A9 A8 A13 /WE A18 A15 VCC A17 A16 A14 A12 A7 A6 A5...
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