IXTP05N100

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-220 TO-263 TO-263HV Maximum Ratings 1000 V 1000 V 30 V 40 V 750 mA 3 A 1 A 100 mJ 3 V/ns 40 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3.0 g 2.5 g 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 375mA, Note 1 Characteristic Values Min. Typ. Max. 1000 V 2.5 4.5 V 100 nA 25 A 500 A 17  VDSS = ID25 =  RDS(on) 1000V 750mA 17 TO-263HV (IXTA) G S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  High Voltage Package (TO-263HV)  Fast Switching Times  Avalanche Rated  Rds(on) HDMOSTM Process  Rugged Polysilicon Gate Cell structure  Extended FBSOA Advantages  High Power Density  Space Savings Applications  Switch-Mode and Resonant-Mode Pow...