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MWI15-12A7 Dataheets PDF



Part Number MWI15-12A7
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description IGBT Modules Sixpack
Datasheet MWI15-12A7 DatasheetMWI15-12A7 Datasheet (PDF)

www.DataSheet4U.com MWI 15-12 A7 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 30 A = 1200 V VCES VCE(sat) typ. = 2.0 V Preliminary Data 1 2 5 6 9 10 16 15 14 3 4 17 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 W; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 82 W; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 30 20 ICM.

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www.DataSheet4U.com MWI 15-12 A7 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 30 A = 1200 V VCES VCE(sat) typ. = 2.0 V Preliminary Data 1 2 5 6 9 10 16 15 14 3 4 17 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 W; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 82 W; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 30 20 ICM = 35 VCEK £ VCES 10 140 V V A A A µs W Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate q q q q q q q q q q q Advantages q q q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.8 200 100 75 500 70 2.3 1.8 1000 70 2.6 6.5 0.9 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.88 K/W space savings reduced protection circuits package designed for wave soldering Typical Applications q q VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V q AC motor control AC servo and robot drives power supplies Inductive load, TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 82 W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 15 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-4 021 MWI 15-12 A7 Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 25 17 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 15 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.4 1.7 16 130 2.7 V V A ns 2.1 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.37 V; R0 = 62 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.327 V; R0 = 30 mΩ Thermal Response Conditions Maximum Ratings -40...+150 -40...+125 °C °C V~ Nm IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.685 K/W Cth2 = 1.162 J/K; Rth2 = 0.195 K/W Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 1.758 K/W Cth2 = 0.639 J/K; Rth2 = 0.342 K/W IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions 2500 2.7 - 3.3 Characteristic Values min. typ. max. 5 mΩ mm mm 0.02 180 K/W g Creepage distance on surface Strike distance in air with heatsink compound 6 6 Dimensions in mm (1 mm = 0.0394") Higher magnification see outlines.pdf © 2000 IXYS All rights reserved 2-4 MWI 15-12 A7 50 A 40 VGE = 17V 15V 13V 11V 50 A 40 30 11V VGE = 17V 15V 13V IC IC 30 20 10 0 0 1 2 3 4 VCE 20 10 0 9V TVJ = 125°C 9V TVJ = 25°C 5 6 V 7 0 1 2 3 4 5 VCE 6 V 7 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 50 A 40 IC 50 40 A 30 TVJ = 125°C TVJ = 25°C IF 30 20 TVJ = 125°C TVJ = 25°C 20 10 VCE = 20V 10 0 4 6 8 10 12 VGE 0 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 40 trr 20 V 200 160 ns 120 15 VGE IRM A 30 trr 10 20 80 5 VCE = 600V IC = 15A 10 IRM TVJ = 125°C VR = 600V IF = 15A MWI1512A7 40 0 0 0 20 40 60 QG 0 80 nC 100 0 200 400 600 800 A/ms -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode © 2000 IXYS All rights reserved 3-4 MWI 15-12 A7 6 mJ Eon 120 ns td(on) 80 t Eoff 6 mJ td(off) 600 ns 400 t Eoff 4 4 VCE = 600V VGE = ±15V tr 2 Eon RG = 82W TVJ = 125°C VCE = 600V VGE = ±15V 40 2 RG = 82W TVJ = 125°C 200 tf 0 0 10 20 IC 0 0 0 10 20 IC 30 A 0 30 A Fig. 7 Typ. turn on energy and switching times versus collector current 3 mJ Eon 150 ns 100 tr VCE = 600V VGE = ±15V IC = 15A TVJ = 125°C Fig. 8 Typ. turn off energy and switching times versus collector current 2.0 mJ Eoff td(off) 800 ns 600 t Eon td(on) 2 t Eoff 1.5 1.0 50 VCE = 600V VGE = ±15V IC = 15A TVJ = 125°C 400 1 0.5 200 tf 0 0 20 40 60 80 100 RG 120 W 0 140 0.0 0 20 40 60 80 100 RG 120 W 140 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 40 A ICM 10 K/W ZthJC 1 Fig.10 Typ. turn off energy and switching times versus gate resistor diode 30 IGBT 0.1 20 0.01 10 RG = 82 W TVJ = 125°C single pulse 0.001 0.0001 0.00001 0.0001 0.001 MWI1512A7 0 0 200 400 600 800 1000 1200 1400 V VCE 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance © 2000 IXYS All rights reserved 4-4 .


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