FDY100PZ

www.DataSheet4U.com January 2006 FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.5 V ESD protection diode (note 3) RoHS Compliant Applications Li-Ion Battery Pack 1 S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted G 1 3 D S 2 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) 1a) Ratings – 20 ±8 – 350 – 1000 625 446 –55 to +150 Unit s V V mA mW °C Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) (Note 1b) 1b) 200 280 °C/W Package Marking and Ordering Information Device Marking A Device FDY100PZ Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDY100PZ Rev A www.fairchildsemi.com FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown ...