FDY3001NZ

www.DataSheet4U.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V ESD protection diode (note 3) RoHS Compliant Applications Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) 1a) Ratings 20 ± 12 200 1000 625 446 –55 to +150 Units V V mA mW °C – Pulsed Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) (Note 1b) 1 200 280 °C/W Package Marking and Ordering Information Device Marking D Device FDY3001NZ Reel Size 7 ’’ Tape width 8 mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDY3001NZ Rev A www.fairchildsemi.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Ga...