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M3D302
PMEM4020ND NPN transistor/Schottky-diode ...
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D302
PMEM4020ND
NPN transistor/
Schottky-diode module
Product specification 2003 Nov 10
Philips Semiconductors
Product specification
NPN transistor/
Schottky-diode module
FEATURES 600 mW total power dissipation High current capability Reduces required PCB area Reduced pick and place costs Small plastic SMD package.
Transistor: Low collector-emitter saturation voltage. Diode: Ultra high-speed switching Very low forward voltage Guard ring protected. APPLICATIONS DC-to-DC converters Inductive load drivers MOSFET drivers. DESCRIPTION Combination of an
NPN transistor with low VCEsat and high current capability and a planar
Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package.
PNP complement: PMEM4020PD. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020ND − DESCRIPTION plastic surface mounted package; 6 leads
Marking code: B6.
handbook, halfpage 6
PMEM4020ND
PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION
5
4
4 5 1 3 6
1
2
3
MGU865
Fig.1
Simplified outline (SOT457) and symbol.
VERSION SOT457
2003 Nov 10
2
Philips Semiconductors
Product specification
NPN transistor/
Schottky-diode module
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL
NPN transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltag...