DatasheetsPDF.com

RSS095N05 Dataheets PDF



Part Number RSS095N05
Manufacturers Rohm
Logo Rohm
Description 4V Drive Nch MOS FET
Datasheet RSS095N05 DatasheetRSS095N05 Datasheet (PDF)

www.DataSheet4U.com RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SOP8 5.0 0.4 (8) (5) 1.75 zFeatures 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). 1pin mark (1) (4) 3.9 6.0 1.27 0.2 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 zAbsolute maximum ratings (Ta=2.

  RSS095N05   RSS095N05



Document
www.DataSheet4U.com RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SOP8 5.0 0.4 (8) (5) 1.75 zFeatures 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). 1pin mark (1) (4) 3.9 6.0 1.27 0.2 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS 45 VGSS 20 ID ±9.5 IDP *1 ±38 IS 1.6 ISP 38 *1 PD 2 *2 Tch 150 Tstg -55 to +150 Unit V V A A A A W o zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗1 (2) (3) (4) (1) (2) (3) (4) 0.4Min. Total power dissipation Chanel temperature Range of Storage temperature *1 PW ≤10µs、Duty cycle≤1% *2 Mounted on a ceramic board (1) C o C ∗1 ESD Protection Diode. ∗2 Body Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. zThermal resistance Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a) * Limits 62.5 Unit o C/W 1/4 RSS095N05 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 45 − 1.0 − − − 10.0 − − − − − − − − − − Typ. − − − − 11 14 15 − 1830 410 210 20 35 78 31 18.9 4.9 7.2 Max. 10 − 1 2.5 16 20 21 − − − − − − − − 26.5 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 9.5A, VGS= 10V ID= 9.5A, VGS= 4.5V ID= 9.5A, VGS= 4V VDS= 10V, ID= 9.5A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 5.0A VGS= 10V RL=5Ω RG=10Ω VDD 25V VGS= 5V ID= 9.5A RL=2.6Ω RG=10Ω Body diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS= 9.5A, VGS=0V 2/4 RSS095N05 Transistor zElectrical characteristic curves 10 VDS=10V pulsed Ta=125oC    75oC    25oC   -25oC 1000 VGS=10V pulsed Ta=125oC 75oC 25oC -25oC 1000 VGS=4.5V pulsed Ta=125oC 75oC 25oC -25oC Static Drain-Source On-State Resistance RDS(on) [m Ω] Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Currnt : ID [A] 1 100 100 0.1 10 10 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 0.01 1 0.1 1 10 0.01 0.1 1 10 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 1000 VGS=4V pulsed Ta=125 C 75oC 25oC -25oC o 100 90 Static Drain-Source On-State Resistance RDS(on) [m Ω] Ta=25oC pulsed 10 VGS=0V pulsed Ta=125 C Source Current : Is [A] o Static Drain-Source On-State Resistance RDS(on) [m Ω] 80 70 60 50 40 30 20 10 ID=5.0A ID=9.5A 100 1 75oC 25oC -25oC 10 0.1 1 0.01 0 0.1 1 10 0 3 6 9 12 15 0.01 0.0 0.3 0.6 0.9 1.2 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 Fig.6 Source-Current vs. Source-Drain Voltage 10000 Ciss Capacitance : C [pF] 1000 Switching Time : t [ns] k tf 1000 Coss RG=10Ω Pulsed Gate-Source Voltage : VGS [V] Ta=25oC VDD=25V VGS=10V 10 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 Ta=25oC VDD=25V ID=9.5A RG=10Ω Pulsed 100 td(off) td(on) 100 Ta=25oC f=1MHz VGS=0V Crss 10 tr 10 0.1 1 10 100 Drain-Source Voltage : VDS [V] 1 0.01 0.1 1 10 Drain Current : ID [A] Total Gate Charge : Qg [nC] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RSS095N05 Transistor zMeasurement circuits Pulse Width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in a.


PMEM4020ND RSS095N05 SEC2002


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)