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RSS095N05
Transistor
4V Drive Nch MOS FET
RSS095N05
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
(8) (5)
1.75
zFeatures 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8).
1pin mark
(1)
(4)
3.9 6.0
1.27
0.2
zApplications Power switching , DC / DC converter , Inverter
Each lead has same dimensions
zPackaging dimensions
Package Code
Basic ordering unit(pieces)
Taping TB 2500
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS 45 VGSS 20 ID ±9.5 IDP *1 ±38 IS 1.6 ISP 38 *1 PD 2 *2 Tch 150 Tstg -55 to +150 Unit V V A A A A W
o
zEquivalent circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
∗2
∗1
(2) (3) (4)
(1) (2) (3) (4)
0.4Min.
Total power dissipation Chanel temperature Range of Storage temperature *1 PW ≤10µs、Duty cycle≤1% *2 Mounted on a ceramic board
(1)
C o C
∗1 ESD Protection Diode. ∗2 Body Diode.
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain
∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded.
zThermal resistance
Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a)
*
Limits 62.5
Unit
o
C/W
1/4
RSS095N05
Transistor
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗Pulsed
RDS (on)∗
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
∗
∗ ∗ ∗ ∗ ∗ ∗ ∗
Min. − 45 − 1.0 − − − 10.0 − − − − − − − − − −
Typ. − − − − 11 14 15 − 1830 410 210 20 35 78 31 18.9 4.9 7.2
Max. 10 − 1 2.5 16 20 21 − − − − − − − − 26.5 − −
Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 9.5A, VGS= 10V ID= 9.5A, VGS= 4.5V ID= 9.5A, VGS= 4V VDS= 10V, ID= 9.5A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 5.0A VGS= 10V RL=5Ω RG=10Ω VDD 25V VGS= 5V ID= 9.5A
RL=2.6Ω
RG=10Ω
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter Forward voltage
∗Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. 1.2
Unit V
Conditions IS= 9.5A, VGS=0V
2/4
RSS095N05
Transistor
zElectrical characteristic curves
10
VDS=10V pulsed Ta=125oC 75oC 25oC -25oC
1000
VGS=10V pulsed Ta=125oC 75oC 25oC -25oC
1000
VGS=4.5V pulsed Ta=125oC 75oC 25oC -25oC
Static Drain-Source On-State Resistance RDS(on) [m Ω]
Static Drain-Source On-State Resistance RDS(on) [mΩ]
Drain Currnt : ID [A]
1
100
100
0.1
10
10
0.01 0.5
1.0
1.5
2.0
2.5
3.0
3.5
1 0.01
1
0.1 1 10
0.01
0.1
1
10
Gate-Source Voltage : VGS [V]
Drain Current : ID [A]
Drain Current : ID [A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1)
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2)
1000
VGS=4V pulsed Ta=125 C 75oC 25oC -25oC
o
100 90
Static Drain-Source On-State Resistance RDS(on) [m Ω]
Ta=25oC pulsed
10
VGS=0V pulsed Ta=125 C
Source Current : Is [A]
o
Static Drain-Source On-State Resistance RDS(on) [m Ω]
80 70 60 50 40 30 20 10
ID=5.0A ID=9.5A
100
1
75oC 25oC -25oC
10
0.1
1 0.01
0
0.1 1 10
0
3
6
9
12
15
0.01 0.0
0.3
0.6
0.9
1.2
Drain Current : ID [A]
Gate-Source Voltage : VGS [V]
Source-Drain Voltage : VSD [V]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3)
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
10000
Fig.6 Source-Current vs. Source-Drain Voltage
10000
Ciss
Capacitance : C [pF]
1000
Switching Time : t [ns] k
tf
1000
Coss
RG=10Ω Pulsed
Gate-Source Voltage : VGS [V]
Ta=25oC VDD=25V VGS=10V
10 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35
Ta=25oC VDD=25V ID=9.5A RG=10Ω Pulsed
100
td(off)
td(on)
100
Ta=25oC f=1MHz VGS=0V
Crss
10
tr
10 0.1 1 10 100
Drain-Source Voltage : VDS [V]
1 0.01 0.1 1 10
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
Fig.7 Typical capacitance vs. Source-Drain Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
3/4
RSS095N05
Transistor
zMeasurement circuits
Pulse Width
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10%
RG VDD
td(on) ton 90% tr td(off) toff 90% tr
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
VG
VGS ID RL IG (Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
4/4
Appendix
Notes
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