RSS095N05

www.DataSheet4U.com RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SOP8 5.0 0.4 (8) (5) 1.75 zFeatures 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). 1pin mark (1) (4) 3.9 6.0 1.27 0.2 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS 45 VGSS 20 ID ±9.5 IDP *1 ±38 IS 1.6 ISP 38 *1 PD 2 *2 Tch 150 Tstg -55 to +150 Unit V V A A A A W o zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗1 (2) (3) (4) (1) (2) (3) (4) 0.4Min. Total power dissipation Chanel temperature Range of Storage temperature *1 PW ≤10µｓ、Duty cycle≤1% *2 Mounted on a ceramic board (1) C o C ∗1 ESD Protection Diode. ∗2 Body Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. zThermal resistance Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a) * Limits 62.5 Unit o C/W 1/4 RSS095N05 Transistor zElectrical charac...