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UFB200FA20 Dataheets PDF



Part Number UFB200FA20
Manufacturers International Rectifier
Logo International Rectifier
Description Insulated Ultrafast Rectifier Module
Datasheet UFB200FA20 DatasheetUFB200FA20 Datasheet (PDF)

www.DataSheet4U.com Bulletin PD-20491 rev. B 02/02 UFB200FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package (VISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Applications Industry Standard Outline Plug-in Compatible with other SOT-227 Packages Easy to Assemble Direct Mounting to Heatsink trr = 45ns.

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www.DataSheet4U.com Bulletin PD-20491 rev. B 02/02 UFB200FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package (VISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Applications Industry Standard Outline Plug-in Compatible with other SOT-227 Packages Easy to Assemble Direct Mounting to Heatsink trr = 45ns IF(AV) = 240A @ TC = 90°C VR = 200V Description The UFB200FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/ RFI. Absolute Maximum Ratings Parameters VR IF IFSM PD V ISOL TJ, TSTG Cathode-to-Anode Voltage Continuous Forward Current, TC = 90°C Single Pulse Forward Current, TC = 25°C Max. Power Dissipation, TC = 90°C Operating Junction and Storage Temperatures Per Diode Per Diode Per Module Max 200 120 1700 240 2500 - 55 to 150 Units V A W V °C RMS Isolation Voltage, Any Terminal to Case, t = 1 min Case Styles UFB200FA20 1 4 SOT-227 www.irf.com 2 3 1 UFB200FA20 Bulletin PD-20491 rev. C 02/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters VBR VFM Cathode Anode Breakdown Voltage Forward Voltage Min Typ Max Units Test Conditions 200 200 1.1 0.95 50 2 V V V µA mA pF IR = 100µA IF = 120A IF = 120A, TJ = 150°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 200V IRM Reverse Leakage Current - CT Junction Capacitance - Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters trr Reverse Recovery Time Min Typ Max Units Test Conditions - 34 58 5.1 10.3 87 300 45 - ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 150A VR = 160V diF /dt = 200A/µs IRRM Peak Recovery Current - A TJ = 25°C TJ = 125°C Qrr Reverse Recovery Charge - nC TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters RthJC RthCS Wt T Junction to Case, Single Leg Conducting Both Leg Conducting Case to Heat Sink, Flat, Greased Surface Weight Mounting Torque 0.05 30 1.3 g (N*m) Min Typ Max 0.5 0.25 Units °C/W K/W 2 www.irf.com UFB200FA20 Bulletin PD-20491 rev. C 02/02 1000 1000 100 10 1 0.1 0.01 0.001 0 100 200 300 400 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Tj = 150˚C 125˚C Reverse Current - I R (µA) 25˚C Instantaneous Forward Current - I F (A) 100 T J = 150˚C T J = 25˚C 10000 Junction Capacitance - C T (pF) 10 T J = 25˚C 1000 1 0.2 100 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000 Forward Voltage Drop - VF (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (per diode) 1 Thermal Impedance Z thJC (°C/W) Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage PDM 0.1 t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (per diode) www.irf.com 3 UFB200FA20 Bulletin PD-20491 rev. C 02/02 150 Allowable Case Temperature (°C) 150 Average Power Loss ( W ) 140 130 120 110 100 90 Square wave (D = 0.50) Rated Vr applied 120 RMS Limit DC 90 60 30 0 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 80 see note (3) 70 0 20 40 60 80 100 120 140 160 Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (per leg) 0 20 40 60 80 100 120 140 160 Average Forward Current - I F(AV) (A) Fig. 6 - Forward Power Loss Characteristics (per leg) 70 IF = 150A IF = 75A 900 800 700 Vr = 160V Tj = 125˚C Tj = 25˚C 60 50 Qrr ( nC ) trr ( ns ) 600 500 400 300 200 IF = 150A IF = 75A 40 30 20 Vr = 160V Tj = 125˚C Tj = 25˚C 100 1000 0 100 10 100 di F /dt (A/µs ) di F /dt (A/µs ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com UFB200FA20 Bulletin PD-20491 rev. C 02/02 3 IF t rr ta tb 4 VR = 200V 0 2 Q rr I RRM 0.01 Ω L = 70µH D.U..


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