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WEDPNF8M722V-XBX

White Electronic Designs

8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package

www.DataSheet4U.com White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-...


White Electronic Designs

WEDPNF8M722V-XBX

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www.DataSheet4U.com White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture Package: 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode. Any combination of sectors can be concurrently erased. Also supports full chip erase n Boot Code Sector Architecture (Bottom) n Embedded Erase and Program Algorithms n n Commercial, Industrial and Military Temperature Ranges n Weight: WEDPNF8M722V-XBX - 2.5 grams typical SDRAM PERFORMANCE FEATURES n Organized as 8M x 72 n High Frequency = 100, 125MHz n Single 3.3V ±0.3V power supply n Erase Suspend/Resume Supports reading data from or programing data to a sector not being erased Fully Synchronous; all signals registered on positive edge of system clock cycle changed every clock cycle BENEFITS n n n Internal pipelined operation; column address can be n Internal banks for hiding row access/precharge n Programmable Burst length 1,2,4,8 or full page n 4096 refresh cycles 44% SPACE SAVINGS Reduced part count 25% I/O Reduction n Reduced I/O count n Suitable for hi-reliability applications n SDRAM Upgradeable to 16M x 72 density (contact FLASH PERFORMANCE FEATURES n User Configurable as 2Mx8, 1M x16 or 512K x 32 n Access Times of 100, 120, 150ns n 3.3 Volt for Read and Write Oper...




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