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WEDPNF8M722V-XBX Dataheets PDF



Part Number WEDPNF8M722V-XBX
Manufacturers White Electronic Designs
Logo White Electronic Designs
Description 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
Datasheet WEDPNF8M722V-XBX DatasheetWEDPNF8M722V-XBX Datasheet (PDF)

www.DataSheet4U.com White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture Package: • 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode •One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode. •Any combination of sectors can be concurrently erased. Also supports full chip erase n Boot Code Sector.

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www.DataSheet4U.com White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture Package: • 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode •One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode. •Any combination of sectors can be concurrently erased. Also supports full chip erase n Boot Code Sector Architecture (Bottom) n Embedded Erase and Program Algorithms n n Commercial, Industrial and Military Temperature Ranges n Weight: • WEDPNF8M722V-XBX - 2.5 grams typical SDRAM PERFORMANCE FEATURES n Organized as 8M x 72 n High Frequency = 100, 125MHz n Single 3.3V ±0.3V power supply n Erase Suspend/Resume •Supports reading data from or programing data to a sector not being erased Fully Synchronous; all signals registered on positive edge of system clock cycle changed every clock cycle BENEFITS n n n Internal pipelined operation; column address can be n Internal banks for hiding row access/precharge n Programmable Burst length 1,2,4,8 or full page n 4096 refresh cycles 44% SPACE SAVINGS Reduced part count •25% I/O Reduction n Reduced I/O count n Suitable for hi-reliability applications n SDRAM Upgradeable to 16M x 72 density (contact FLASH PERFORMANCE FEATURES n User Configurable as 2Mx8, 1M x16 or 512K x 32 n Access Times of 100, 120, 150ns n 3.3 Volt for Read and Write Operations n 1,000,000 Erase/Program Cycles factory for information) * This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice. September 2002 Rev. 2 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs FIG. 1 PIN CONFIGURATION TOP VIEW WEDPNF8M722V-XBX NOTES: 1. DNU = Do Not Use White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 2 White Electronic Designs FIG. 2 FUNCTIONAL BLOCK DIAGRAMS SDRAM WEDPNF8M722V-XBX FLASH 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs PACKAGE PINOUT LISTING Signal Name V CC GND FD0 - 15 RYBY1 RST BYTE1 FD16 - 31 RYBY2 BYTE2 FA1-19 FCS1 FCS2 FWE FOE A0 - A11 BA0 - 1 CS0 WE0 CLK0 CKE0 RAS0 CAS0 DQML0 DQMH0 CS1 WE1 CLK1 CKE1 RAS1 CAS1 DQML1 DQMH1 CS2 WE2 CLK2 CKE2 RAS2 CAS2 DQML2 DQMH2 CS3 WE3 CLK3 CKE3 RAS3 Pin Number WEDPNF8M722V-XBX D15, E15, F8, F10, F15, G4, H4, J14, J15, J16, J17, K2, K3, K4, K5, L14, L15, L16, M5, M14, M15, N4, N5, N7, N8, N14, P4, P5, P6, P7, P11, P12, P13, P14, R4, T15, U15, V15 D4, D16, E4, F4, F7, F9, F11, F12, F13, G14, G15, H15, J2, J3, J4, J5, K14, K15, K16, K17, L4, L5, M4, N6, N9, N10, N11, N12, N13, N15, P8, P9, P10, P15, R15, T4, U4, V4 E8, C8, E9, C9, C10, D11, C11, D12, D8, B8, D9, D10, E10, E11, E12, E13 H5 A7 D13 C12, C15, A15, B9, B11, B13, A10, A12, C13, B15, B14, B10, B12, A9, A11, A14 A8 A13 F14, F5, E7, E6, E5, D6, D5, C6, C5, C4, B6, B5, B4, A6, A5, A4, C14, D7, C7 H14 E14 B7 D14 V12, U13, V13, V14, T14, R13, T13, R12, T12, R11, U12, T11 U11, V11 H3 E3 C3 B3 G3 F3 H2 D3 H18 J18 B18 A18 G18 F18 E18 C18 T18 R18 L18 K18 U18 V18 V17 M18 U3 V3 M3 L3 T3 White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 4 White Electronic Designs Signal Name CAS3 DQML3 DQMH3 CS4 WE4 CLK4 CKE4 RAS4 CAS4 DQML4 DQMH4 DQ0 - 15 DQ16 - 31 DQ32 - 47 DQ48 - 63 DQ64 - 79 DNU R3 U2 N3 T10 U9 R9 R10 U10 V10 V9 T9 E1, F1, E2, G1, F2, H1, J1, G2, A3, A2, B2, C2, B1, D2, C1, D1, Pin Number WEDPNF8M722V-XBX PACKAGE PINOUT LISTING (CONTINUED) E16, F16, G16, H16, E17, F17, G17, H17, D18, A17, B17, C17, D17, A16, B16, C16 R17, T17, U16, V16, T16, R16, U17, P18, N16, P16, P17, M16, M17, N17, N18, L17 R1, P2, T1, R2, P3, U1, V2, T2, M2, N2, L2, M1, P1, N1, L1, K1 U8, U6, V5, V6, U7, U5, V7, V8, R8, R6, T8, T6, R7, R5, T7, T5 F6, G5, R14, U14, V1 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Range (VCC) Signal Voltage Range Operating Temperature TA (Mil) Operating Temperature TA (Ind) Storage Temperature, Plastic Flash Endurance (write/erase cycles) -0.5 to +4.0 -0.5 to Vcc +0.5 -55 to +125 -40 to +85 -65 to +150 1,000,000 min. Unit V V °C °C °C cycles WEDPNF8M722V-XBX SDRAM CAPACITANCE (NOTE 2) Parameter Input Capacitance: CLK SDRAM Addresses, BA0-1 Input Capacitance Input Capacitance: All other input-only pins Input/Output Capacitance: I/Os Flash Address Capacitance Flash Data Capacitance FOE, FWE, RST Symbol CI1 CA CI2 CIO FA FD Max 8 32 8 12 15 10 20 Unit pF pF pF pF pF pF pF NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not .


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