ZXMP2120E5

www.DataSheet4U.com ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). FEATURES SOT23-5 High voltage Low on-resistance Fast switching speed Low gate drive Low threshold SOT23-5 package variant engineered to increase spacing between high voltage pins. APPLICATIONS Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE ZXMP2120E5TA REEL SIZE (inches) 7 TAPE WIDTH (mm) 8mm embossed QUANTITY PER REEL 3,000 units N/C D N/C S DEVICE MARKING G P120 PINOUT - TOP VIEW ISSUE 2 - SEPTEMBER 2006 1 ZXMP2120E5 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V DSS V GS LIMIT -200 ± 20 -122 -0.7 -0.7 0.75 6 T j : T stg -55 to +150 UNIT V V mA A A W mW/°C °C Continuous Drain Current (V GS =10V; T amb =25°C) (a) I D I DM Pulsed Drain Current (c) Pulsed Source Current (Body Diode) (c) Power Dissipation at T amb =25°C Linear Derating Factor (a) I SM PD Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to Ambient (a) ...