200V P-CHANNEL ENHANCEMENT MODE MOSFET
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ZXMP2120E5
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -12...
Description
www.DataSheet4U.com
ZXMP2120E5
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). FEATURES
SOT23-5
High voltage Low on-resistance Fast switching speed Low gate drive Low threshold SOT23-5 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE ZXMP2120E5TA REEL SIZE (inches) 7 TAPE WIDTH (mm) 8mm embossed QUANTITY PER REEL 3,000 units
N/C D N/C
S
DEVICE MARKING
G
P120
PINOUT - TOP VIEW
ISSUE 2 - SEPTEMBER 2006 1
ZXMP2120E5
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V DSS V GS LIMIT -200 ± 20 -122 -0.7 -0.7 0.75 6 T j : T stg -55 to +150 UNIT V V mA A A W mW/°C °C
Continuous Drain Current (V GS =10V; T amb =25°C) (a) I D I DM Pulsed Drain Current (c) Pulsed Source Current (Body Diode) (c) Power Dissipation at T amb =25°C Linear Derating Factor
(a)
I SM PD
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) ...
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