UMTS-band 4W HBT Amplifier Module
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AP502
Product Features
• 2110 – 2170 MHz • 30 dB Gain • +36 dBm P1dB • -55 dBc ACLR
@ 25 dBm wCDMA ...
Description
www.DataSheet4U.com
AP502
Product Features
2110 – 2170 MHz 30 dB Gain +36 dBm P1dB -55 dBc ACLR
@ 25 dBm wCDMA linear power
The Communications Edge TM Product Information
UMTS-band 4W HBT Amplifier Module
Product Description
The AP502 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 30 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power. The module has been internally optimized for driver applications provide -55 dBc ACLR at 25 for wCDMA applications. The module can be biased down for current when higher efficiency is required. The AP502 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested. The AP502 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations.
Functional Diagram
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+12 V Single Supply ...
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