AP502

www.DataSheet4U.com AP502 Product Features 2110 – 2170 MHz 30 dB Gain +36 dBm P1dB -55 dBc ACLR @ 25 dBm wCDMA linear power The Communications Edge TM Product Information UMTS-band 4W HBT Amplifier Module Product Description The AP502 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 30 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power. The module has been internally optimized for driver applications provide -55 dBc ACLR at 25 for wCDMA applications. The module can be biased down for current when higher efficiency is required. The AP502 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested. The AP502 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations. Functional Diagram 1 2 3 4 5 6 +12 V Single Supply ...