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FDMS3572 N-Channel UltraFET Trench® MOSFET
November 2006
FDMS3572 N-Channel UltraFET Trench® MOSFET
80V, 22A, 16.5mΩ Features General Description
Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A Typ Qg = 28nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant
tm
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Application
DC - DC Conversion
Pin 1
S
S
S
G
D D D
D D D D
5 6 7 8
4 G 3 S 2 S 1 S
D
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 80 ±20 22 48 8.8 50 78 2.5 -55 to +150 W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 °C/W
Package Marking and Ordering Information
Device Marking FDMS3572 Device FDMS3572 Package Power 56 Reel Size 7’’ Tape Width 12mm Quantity 3000 units
©2006 Fairchild Semiconductor Corporation FDMS3572 Rev.C
1
www.fairchildsemi.com
FDMS3572 N-Channel UltraFET Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 64V, VGS = 0V VGS = ±20V, VDS = 0V 80 76 1 ±100 V mV/°C µA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 8.8A VGS = 6V, ID = 8.4A VGS = 10V, ID = 8.8A, TJ = 125°C VDS = 10V, ID = 8.8A 2 3.2 -11 13.5 18.3 22.2 23 16.5 24 29 S mΩ 4 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 40V, VGS = 0V, f = 1MHz f = 1MHz 1870 275 78 1.3 2490 365 120 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VDD = 40V ID = 8.8A VDD = 40V, ID = 8.8A VGS = 10V, RGEN = 6Ω 11 13 24 12 28 9 8 20 24 39 22 40 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 8.8A (Note 2) 0.8 43 71 1.2 65 107 V ns nC IF = 8.8A, di/dt = 100A/µs
Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMS3572 Rev.C
2
www.fairchildsemi.com
FDMS3572 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
60 50
ID, DRAIN CURRENT (A)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 8V VGS = 6V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
3.5 3.0 2.5 2.0 1.5 1.0
VGS = 10V VGS = 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
40 30 20 10 0 0
VGS = 5V
VGS = 6V VGS = 8V
1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V)
4
0.5
0
10
20 30 40 ID, DRAIN CURRENT(A)
50
60
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
50
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75
ID = 8.8A VGS = 10V
40
TJ = 150oC
30
ID = 9A
20
TJ = 25oC
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
10
4
5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction Temperature
50
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
100
ID, DRAIN CURRENT (A)
40 30 20
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
VGS = 0V
10 1 0.1 0.01 1E-3 0.0
TJ = 150oC
TJ = 25oC
TJ = 150oC
TJ = 25oC TJ = -55oC
10 0
TJ = -55oC
2
4 5 6 VGS, GATE TO SOURCE VOLTAGE (V)
3
7
0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
.