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HAT2173H Dataheets PDF



Part Number HAT2173H
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel MOSFET
Datasheet HAT2173H DatasheetHAT2173H Datasheet (PDF)

HAT2173H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 12 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0030-0200 Rev.2.00 Sep 26, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Bo.

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HAT2173H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 12 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0030-0200 Rev.2.00 Sep 26, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 100 ±20 25 100 25 25 62.5 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.2.00 Sep 26, 2005 page 1 of 7 HAT2173H Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 100 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 4.0 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 27 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate resistance Rg — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body–drain diode forward voltage VDF — Body–drain diode reverse recovery trr — time Notes: 4. Pulse test Typ — — — — — 12 13 45 4350 520 150 0.5 61 23 14.5 20 15 37 5.7 0.82 55 Max — — ±10 1 6.0 15 17.5 — — — — — — — — — — — — 1.07 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, ID = 20 mA ID = 12.5 A, VGS = 10 V Note4 ID = 12.5 A, VGS = 8 V Note4 ID = 12.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 50 V,VGS = 10 V, ID = 25 A VGS = 10 V, ID = 12.5 A, VDD ≅ 30 V, RL = 2.4 Ω, Rg = 4.7 Ω IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0, diF/ dt = 100 A/ µs Rev.2.00 Sep 26, 2005 page 2 of 7 Channel Dissipation Pch (W) HAT2173H Main Characteristics Power vs. Temperature Derating 40 30 20 10 Drain Current ID (A) 0 50 100 150 200 Case Temperature Tc (°C) Typical Output Characteristics 50 10 V 8V 40 6.2 V Pulse Test 6.0 V 5.8 V 30 20 5.6 V 10 5.4 V VGS = 5.0 V 5.2 V 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 500 Pulse Test 400 300 ID = 50 A 200 20 A 100 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS(on) (mV) Rev.2.00 Sep 26, 2005 page 3 of 7 Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area 500 100 10 DCPOWpe=ra11ti0omnm1s0s0 µs 10 µs 1 Operation in this area is 0.1 limited by RDS(on) Tc = 25°C 0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 500 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 50 VDS = 10 V Pulse Test 40 30 25°C 20 Tc = 75°C -25°C 10 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 VGS = 8 V 10 10 V 5 2 1 1 3 10 30 100 Drain Current ID (A) HAT2173H Static Drain to Source on State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 30 ID = 5 A, 10 A, 20 A 20 VGS = 8 V 10 10 V 5 A, 10 A, 20 A 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 100 50 Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) 20 10 0.1 0.3 di / dt = 100 A / µs VGS = 0, Ta = 25°C 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics 250 20 ID = 25 A VGS VDD = 100 V 200 50 V 16 25 V 150 12 VDD = 100 V 100 8 50 V 50 25 V VDS 0 20 40 60 4 0 80 100 Gate Charge Qg (nc) Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 1000 300 100 Tc = -25°C 30 10 75°C 3 25°C 1 0.3 VDS = 10 V 0.1 Pulse Test 0.1 0.3 1 3 10 30 100 Drain Current ID (A) 10000 3000 1000 300 100 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 1000 Switching Characteristics 300 tf 100 30 td(on) td(off) 10 tr 3 1 0.1 0.2 VGS = 10 V, VDS = 1.


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