Document
HAT2173H
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 12 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
5 D
4 G
SSS 123
REJ03G0030-0200 Rev.2.00
Sep 26, 2005
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C
Tch
Tstg
Ratings 100 ±20 25 100 25 25 62.5 30 4.17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C/W °C °C
Rev.2.00 Sep 26, 2005 page 1 of 7
HAT2173H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 100
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
4.0
Static drain to source on state resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
27
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 4. Pulse test
Typ — — — — — 12 13 45 4350 520 150 0.5 61 23 14.5 20 15 37 5.7 0.82 55
Max — — ±10 1 6.0 15 17.5 — — — — — — — — — — — — 1.07 —
Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, ID = 20 mA ID = 12.5 A, VGS = 10 V Note4 ID = 12.5 A, VGS = 8 V Note4 ID = 12.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 50 V,VGS = 10 V, ID = 25 A
VGS = 10 V, ID = 12.5 A, VDD ≅ 30 V, RL = 2.4 Ω, Rg = 4.7 Ω
IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0, diF/ dt = 100 A/ µs
Rev.2.00 Sep 26, 2005 page 2 of 7
Channel Dissipation Pch (W)
HAT2173H
Main Characteristics
Power vs. Temperature Derating 40
30
20
10
Drain Current ID (A)
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
8V
40 6.2 V
Pulse Test 6.0 V
5.8 V 30
20
5.6 V
10
5.4 V
VGS = 5.0 V
5.2 V
0
2
4
6
8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
500 Pulse Test
400
300 ID = 50 A
200
20 A 100
10 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS(on) (mV)
Rev.2.00 Sep 26, 2005 page 3 of 7
Drain to Source On State Resistance RDS(on) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area 500
100
10
DCPOWpe=ra11ti0omnm1s0s0 µs 10 µs
1 Operation in this area is
0.1 limited by RDS(on)
Tc = 25°C 0.01 1 shot Pulse
0.1 0.3 1 3 10 30 100 500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50 VDS = 10 V Pulse Test
40
30
25°C 20
Tc = 75°C -25°C
10
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test
50
20 VGS = 8 V
10
10 V
5
2
1
1
3
10
30
100
Drain Current ID (A)
HAT2173H
Static Drain to Source on State Resistance RDS(on) (mΩ)
Static Drain to Source on State Resistance vs. Temperature
50 Pulse Test
40
30
ID = 5 A, 10 A, 20 A
20 VGS = 8 V
10
10 V
5 A, 10 A, 20 A
0 -25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse Recovery Time
100
50
Reverse Recovery Time trr (ns)
Drain to Source Voltage VDS (V)
20
10 0.1 0.3
di / dt = 100 A / µs VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
250
20
ID = 25 A
VGS
VDD = 100 V
200
50 V
16
25 V
150
12
VDD = 100 V
100
8
50 V 50
25 V VDS
0
20 40 60
4
0 80 100
Gate Charge Qg (nc)
Gate to Source Voltage VGS (V) Switching Time t (ns)
Capacitance C (pF)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs. Drain Current
1000
300
100 Tc = -25°C
30
10
75°C
3
25°C
1
0.3
VDS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000 3000 1000 300
100
Typical Capacitance vs. Drain to Source Voltage
Ciss
Coss Crss
30
VGS = 0
f = 1 MHz 10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300 tf
100
30 td(on)
td(off)
10
tr 3
1 0.1 0.2
VGS = 10 V, VDS = 1.