DatasheetsPDF.com

MCR22-6

ON Semiconductor

(MCR22-6 / -8) SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

MCR22-6, MCR22-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed a...


ON Semiconductor

MCR22-6

File Download Download MCR22-6 Datasheet


Description
MCR22-6, MCR22-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low−power switching applications. Features 150 A for 2 ms Safe Area High dv/dt Very Low Forward “On” Voltage at High Current Low−Cost TO−226 (TO−92) Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage (Note 1) (RGK = IK, TJ = *40 to +110°C, Sine Wave, 50 to 60 Hz, RGK = 1kW) MCR22−6 MCR22−8 VDRM, VRRM 400 600 On−State Current RMS (180° Conduction Angles, TC = 80°C) IT(RMS) 1.5 Peak Non−repetitive Surge Current, @TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) ITSM I2t 15 0.9 Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TA = 25°C) PGM 0.5 Forward Average Gate Power (t = 8.3 msec, TA = 25°C) PG(AV) 0.1 Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TA = 25°C) IFGM 0.2 Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TA = 25°C) VRGM 5.0 Operating Junction Temperature Range @ Rated VRRM and VDRM TJ −40 to +110 Storage Temperature Range THERMAL CHARACTERISTICS Tstg −40 to +150 Unit V A A A2s W W A V °C °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Lead Solder Temperature (Lead Length q 1/16″ from case, 10 S Max) ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)