Power Amplifier
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Advance Product Information
February 7, 2006
13 - 15 GHz 4W Power Amplifier
Key Features
• • • • •...
Description
www.DataSheet4U.com
Advance Product Information
February 7, 2006
13 - 15 GHz 4W Power Amplifier
Key Features
Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
TGA2502
0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm
Fixtured Measured Performance
Bias Conditions: Vd = 7V, Idq = 1.3A
30 25 20
Primary Applications
Ku-Band VSAT Transmit
Gain (dB)
15 10 5 0 -5
-10 12 12.5 13 13.5 14 14.5 15 15.5 16
Frequency (GHz)
, q Bias Conditions: Vd = 7V, Idq = 1.3A 40 35
13GHz
Pout (dBm)
30 25 20 15 10 0 3 6 9 Pin (dBm) 12 15 18
14GHz 15GHz 15.5GHz 16GHz 16.5GHz 17GHz
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
February 7, 2006 TGA2502
TABLE I MAXIMUM RATINGS 1/ Symbol
V+ I+ PD PIN TCH TM TSTG
Parameter
Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature
Value
8V 2.3 A TBD 24 dBm 150 °C 320 °C -65 °C to 150 °C
Notes
2/
3/, 4/
1/ 2/ 3/ 4/
These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junct...
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