TGA2502

www.DataSheet4U.com Advance Product Information February 7, 2006 13 - 15 GHz 4W Power Amplifier Key Features Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm TGA2502 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Fixtured Measured Performance Bias Conditions: Vd = 7V, Idq = 1.3A 30 25 20 Primary Applications Ku-Band VSAT Transmit Gain (dB) 15 10 5 0 -5 -10 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) , q Bias Conditions: Vd = 7V, Idq = 1.3A 40 35 13GHz Pout (dBm) 30 25 20 15 10 0 3 6 9 Pin (dBm) 12 15 18 14GHz 15GHz 15.5GHz 16GHz 16.5GHz 17GHz Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information February 7, 2006 TGA2502 TABLE I MAXIMUM RATINGS 1/ Symbol V+ I+ PD PIN TCH TM TSTG Parameter Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 8V 2.3 A TBD 24 dBm 150 °C 320 °C -65 °C to 150 °C Notes 2/ 3/, 4/ 1/ 2/ 3/ 4/ These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junct...