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TGA2505 Dataheets PDF



Part Number TGA2505
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description Power Amplifier
Datasheet TGA2505 DatasheetTGA2505 Datasheet (PDF)

www.DataSheet4U.com Advance Product Information April 5, 2006 13 - 17 GHz 2.5 Watt, 25dB Power Amplifier • • • • • • • • 10 5 0 -5 -10 -15 -20 11 12 13 14 15 16 17 18 19 TGA2505 Key Features and Performance 34 dBm Midband Pout 25 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss Built-in Directional Power Detector with Reference 0.25µm pHEMT Technology Bias Conditions: 7V, 640mA Chip dimensions: 2.03 x 1.39 x 0.10 mm (0.080 x 0.055 x 0.004 inches) Preliminary M.

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www.DataSheet4U.com Advance Product Information April 5, 2006 13 - 17 GHz 2.5 Watt, 25dB Power Amplifier • • • • • • • • 10 5 0 -5 -10 -15 -20 11 12 13 14 15 16 17 18 19 TGA2505 Key Features and Performance 34 dBm Midband Pout 25 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss Built-in Directional Power Detector with Reference 0.25µm pHEMT Technology Bias Conditions: 7V, 640mA Chip dimensions: 2.03 x 1.39 x 0.10 mm (0.080 x 0.055 x 0.004 inches) Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA 30 25 20 15 10 5 0 S11, S22 (dB) S21 (dB) S21 S11 S22 Primary Applications • • VSAT Point-to-Point Frequency (GHz) 35 34 33 32 31 30 29 28 27 26 25 11 12 13 14 15 16 17 18 19 60 55 50 45 Psat PAE 40 35 30 25 20 15 10 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. PAE@Psat (%) Psat (dBm) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 1 Advance Product Information April 5, 2006 TABLE I MAXIMUM RATINGS Symbol V I + - TGA2505 Value 8V -5V to 0V 1300 mA 18 mA 24 dBm 6.43 W 150 C 320 C -65 to 150 0C 0 0 Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Notes 2/ 2/ 2/ 2/ 3/ 4/ 5/ V + | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70°C, the median life is reduced from 8.9E+6 to 1E+6. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE TEST (TA = 25 °C, Nominal) NOTES 1/ 1/ 2/ 2/ 2/ SYMBOL IDSS GM |VP| |VBVGS| |VBVGD| MIN 80 175 0.5 8 13 LIMITS MAX 381 425 1.5 30 30 UNITS mA mS V V V 1/ Measurements are performed on a 800µm FET. 2/ VP, VBVGD, and VBVGS are negative. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 2 Advance Product Information April 5, 2006 TGA2505 TABLE III RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 7V, Id = 640mA r5%) SYMBOL PARAMETER TEST CONDITION LIMITS TYP 25 UNITS Gain Small Signal Gain F = 13 – 17 GHz dB IRL Input Return Loss F = 13 – 17 GHz 7 dB ORL Output Return Loss Output Power @ Pin = +15 dBm F = 13 – 17 GHz 12 dB PWR F = 13 – 17 GHz 34 dBm Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TABLE IV THERMAL INFORMATION PARAMETER Rθjc Thermal Resistance (Channel to Backside) TEST CONDITION VD = 7V ID = 640mA PD = 4.48W TCH (qC) RTjc (qC/W) 12.44 MTTF (HRS) 8.9E+6 125.74 Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 3 Advance Product Information April 5, 2006 Typical Fixtured Performance 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 11 12 13 14 15 16 17 18 TGA2505 S21 (dB) 19 Frequency (GHz) 0 -5 S11 S22 S11,S22 (dB) -10 -15 -20 -25 -30 11 12 13 14 15 16 17 18 19 Frequency (GHz) 4 TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com Advance Product Information April 5, 2006 Typical Fixtured Performance 35 34.5 34 33.5 TGA2505 Psat P2dB Pout (dBm) 33 32.5 32 31.5 31 30.5 30 11 12 13 14 15 16 17 18 19 Frequency (GHz) 40 35 30 PAE @ Psat PAE @ P2dB PAE (%) 25 20 15 10 11 12 13 14 15 16 17 18 19 Frequency (GHz) 5 TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com Advance Product Information April 5, 2006 Typical Fixtured Performance 37 35 TGA2505 2600 2400 2200 2000 Output Power (dBm) 33 31 29 27 25 23 21 19 17 -5 -3 13.5 GHz 14.0 GHz 14.5 GHz 1600 1400 1200 1000 800 600 -1 1 3 5 7 9 11 13 15 17 19 Input power (dBm) Id (mA) 6 1800 TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com Advance Product Information April 5, 2006 Typical Fixtured Performance 18 12 6 TGA2505 IMD3 (dBm) 0 -6 -12 -18 -24 -30 -36 16 18 20 22 24 26 28 30 13GHz 14GHz 15GHz Output power/tone (dBm) 45 44 43 IP3 Avg (dBm) 42 41 40 39 38 37 36 35 11 12 13 14 15 16 17 18 19 Frequency (GHz) 7 TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com Advance Product Information April 5, 2006 TG.


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