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TGA2511 Dataheets PDF



Part Number TGA2511
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description X-Band Low Noise Amplifier
Datasheet TGA2511 DatasheetTGA2511 Datasheet (PDF)

www.DataSheet4U.com Advance Product Information July 14, 2005 X-Band Low Noise Amplifier Key Features • • • • • • TGA2511 Typical Frequency Range: 6 - 14 GHz 1.3 dB Nominal Noise Figure 20 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 80 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) Product Description The TriQuint TGA2511 is a wideband LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications. Offe.

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www.DataSheet4U.com Advance Product Information July 14, 2005 X-Band Low Noise Amplifier Key Features • • • • • • TGA2511 Typical Frequency Range: 6 - 14 GHz 1.3 dB Nominal Noise Figure 20 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 80 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) Product Description The TriQuint TGA2511 is a wideband LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications. Offering high gain 20dB typical from 6-14GHz, the TGA2511provides excellent noise performance with typical midband NF 1.3dB, while the balanced topology offers good return loss typically 15dB. The TGA2511 is designed for maximum ease of use. The large input FETs can handle up to 21dBm input power reliably. The part is also assembled in self-biased mode, using a single +5V supply connection from either side of the chip, or in gate biased mode, allowing the user to control the current for a particular applications. In self-biased mode the TGA2511 offers 6dBm typical P1dB, while in gate-biased mode the typical P1dB is over 12dBm. The small size of 2.46mm2 allows ease of compaction into MultiChip-Modules (MCMs). The TGA2511 is 100% DC and RF tested onwafer to ensure performance compliance. Lead-Free & RoHS compliant. Primary Applications • • • X-Band Radar EW, ECM Point-to-Point Radio Measured Fixtured Data Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA 30 GAIN S-Parameter (dB) 20 10 0 -10 -20 -30 4 6 8 10 12 14 16 18 Frequency (GHz) IRL ORL 5 Noise Figure (dB) 4 3 2 1 0 4 6 8 10 12 14 16 18 Frequency (GHz) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ Drain Voltage Gate Voltage Range Drain Current (gate biased) Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE [3.5 + (0.0125)(Id)] V -1 TO +0.5 V 240 mA 14 mA 21 dBm See note 5/ 117 0C 320 C -65 to 150 0C 0 NOTES 2/ 3/ 2/ 4/ 4/ 2/ 6/ 7/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Unit for Id is A Total current for the entire MMIC. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (117 0C – TBASE 0C) / TJC (0C/W) Where TBASE is the base plate temperature, TJC is on Table IV. 6/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possibl levels. These ratin.


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