DatasheetsPDF.com

TGA2511

TriQuint Semiconductor

X-Band Low Noise Amplifier

www.DataSheet4U.com Advance Product Information July 14, 2005 X-Band Low Noise Amplifier Key Features • • • • • • TGA...


TriQuint Semiconductor

TGA2511

File Download Download TGA2511 Datasheet


Description
www.DataSheet4U.com Advance Product Information July 14, 2005 X-Band Low Noise Amplifier Key Features TGA2511 Typical Frequency Range: 6 - 14 GHz 1.3 dB Nominal Noise Figure 20 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 80 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) Product Description The TriQuint TGA2511 is a wideband LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications. Offering high gain 20dB typical from 6-14GHz, the TGA2511provides excellent noise performance with typical midband NF 1.3dB, while the balanced topology offers good return loss typically 15dB. The TGA2511 is designed for maximum ease of use. The large input FETs can handle up to 21dBm input power reliably. The part is also assembled in self-biased mode, using a single +5V supply connection from either side of the chip, or in gate biased mode, allowing the user to control the current for a particular applications. In self-biased mode the TGA2511 offers 6dBm typical P1dB, while in gate-biased mode the typical P1dB is over 12dBm. The small size of 2.46mm2 allows ease of compaction into MultiChip-Modules (MCMs). The TGA2511 is 100% DC and RF tested onwafer to ensure performance compliance. Lead-Free & RoHS compliant. Primary Applications X-Band Radar EW, ECM Point-to-Point Radio Measured Fixtured Data Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA 30 GAIN S-Parameter (dB) 20 10 0 -1...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)