DSEE15-12CC

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEE15-12CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 15 A VRRM = 1200 Vc trr = 35 ns VRRMc V 1200 VRRM V 600 Type ISOPLUS 220 E153432 1 2 3 DSEE15-12CC Symbol IFRMS IFAVMc IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Conditions TC = 100°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 15 110 0.2 0.1 -55...+175 175 -55...+150 A A A mJ A z Isolated back surface* Features z °C °C °C °C W V~ z z z z z z 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 260 95 2500 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 11...65 / 2.5...15 N / lb g Applications z z z z Symbol IR d VF RthJC RthCH trr IRM Conditions TVJ = 25°C IF = 15 A; VR = VRRM TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 1.5 2.05 1.6 0.6 µA mA V V K/W K/W ns z TVJ = 150°C VR = VRRMe z z z Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in sw...