DSEE30-12A

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEE30-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns VRRMc V 1200 VRRM V 600 Type TO-247 AD DSEE30-12A 1 2 3 1 2 3 Symbol IFRMS IFAVM c IFSM EAS IAR TVJ TVJM Tstg TL Ptot Md Weight Conditions TC = 90°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5· VR typ.; f = 10 kHz; repetitive Maximum Ratings 60 30 200 0.2 0.1 -55...+175 175 -55...+150 A A A mJ ● ● Features Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 A °C °C °C °C W Nm/ lb.in. g ● ● ● ● 1.6 mm (0.063 in) from case for 10 s TC = 25°C Mounting Torque typical 260 165 0.9/6 2 Applications ● ● ● ● Symbol IRcd VF e RthJC RthCH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C V R = VRRM IF = 30 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 200 2 1.75 2.5 0.9 0.25 µA mA V V K/W K/W ns A ● ● ● ● Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● IF = 1 A; -di/dt = 200 A/µs; VR = 30 V VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 30 4 ● Avalanche voltage rated for reliable operation Soft ...