DSEE55-24N1F

www.DataSheet4U.com Advanced Technical Information Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM DSEE 55-24N1F VRRM = 2400 V IF(AV)M = 55 A trr = 220 ns 1 3 1 3 5 Rectifier Bridge Symbol VRRM c VRRM IFAV IF(AV)M IFSM EAS Ptot TC = 90°C; sine 180° TC = 90°C; d = 0.5 rectangular TVJ = 25°C; t = 10 ms; sine 50 Hz IAS = 16 A; LAS = 180 µH; TC = 25°C; non repetitive TC = 25°C (per diode) Conditions Maximum Ratings 2400 1200 53 55 500 28 200 V V A A A mJ W Features 5 HiPerFREDTM Epitaxial Diodes - fast and soft reverse recovery – low switching losses - avalanche rated - low leakage current ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - enlarged creepage between pins - application friendly pinout - high reliability - industry standard outline Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 1.5 1 79 220 2.5 1 V V mA mA A ns 0.63 K/W Applications rectifiers - high frequency rectifiers, output rectifiers of switched mode power supplies - mains rectifiers with minimized emission of disturbances diodes in snubber networks high voltage diodes using the series connection in the component VF IR IRM trr RthJC IF = 40 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C IF = 75 A; diF /dt = -750 A/µs; TVJ = 125°C VR = 600 V (per diode) Data according to IEC 60747 and refer to a single diode unless otherwise state...