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PD -90715B
IRGMC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• • • • • Electrically Isolated and...
www.DataSheet4U.com
PD -90715B
IRGMC30U
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses
C
Ultra Fast Speed IGBT
VCES = 600V
G E
VCE(on) max = 3.0V
@VGE = 15V, IC = 8.0A
Description
n-channel
Insulated Gate Bipolar
Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar
transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
TO-254AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight
Max.
600 17 8.0 68 68 ± 20 75 30 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 9.3 (typical)
Units
V A
V W
°C g
...