N-channel Enhancement Mode Power MOSFET
BLV2N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requiremen...
Description
BLV2N60
N-channel Enhancement Mode Power MOSFET
Avalanche Energy Specified Fast Switching Simple Drive Requirements
BVDSS RDS(ON) ID
600V 4.4Ω 2A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol VDS VGS
ID
IDM
PD
EAS IAR EAR Tj TSDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Value 600 + 30
2 1.26
8 23 0.18 40 2 2.3 -55 to +150 -55 to +150
Thermal Characteristics
Symbol Rth j-c Rth j-a
Parameter Thermal Resistance, Junction to Case Max. Thermal Resistance, Junction to Ambient Max.
http://www.belling.com.cn
-1Total 6 Pages
Value 5.5 62.5
Units V V A A A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
2008.08.08
BLV2N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
VGS=0V, ID=250uA Refe...
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