CPH3425

www.DataSheet4U.com 5Ordering number : ENN7529 CPH3425 N-Channel Silicon MOSFET CPH3425 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2152A [CPH3425] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.2 Ratings 100 ±20 0.5 2 0.9 150 --55 to +150 0.2 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=250mA ID=250mA, VGS=10V ID=250mA, VGS=4V Ratings min 100 1 ±10 1.2 0.4 0.8 1.4 1.8 1.85 2.5 2.6 typ max Unit V µA µA V S Ω Ω Marking : ZA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircra...