M6MGD13TW34DWG

www.DataSheet4U.com RENESAS LSIs M6MGD13TW34DWG 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD13TW34DWG is a Stacked Chip Scale Package The M6MGD13TW34DWG is suitable for a high performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 128M-bit Flash memory and 32M-bit mounting area, weight and small power dissipation. Mobile RAM in a 72-pin Stacked CSP for lead free use. 128M-bit Flash memory is a 8,388,608 words, single power supply and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR IV (Divided bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can not be programmed or erased, when F-WP# is Low. Using Software Lock Release function, program or erase operation can be executed. 32M-bit Mobile RAM is a 2,097,152 words high density RAM fabricated by CMOS technology for the peripheral circuit and DRAM cell for the memory array. The interface is compatible to an asynchronous SRAM. The cells are automatically refreshed and the refresh control is not required for system. The device also has the partial block refresh scheme and the power down mode by writing the command. Features Access Time Flash Mobile RAM Supply Voltage Ambient Temperature Package 70ns (Max.) 80ns (Max.) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ba...