N-CHANNEL PowerMESH MOSFET
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STP11NB40 STP11NB40FP
N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH™ MOSFET
TYPE...
Description
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STP11NB40 STP11NB40FP
N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH™ MOSFET
TYPE ST P11NB40 ST P11NB40FP
s s s s s
V DSS 400 V 400 V
R DS(on) < 0.55 Ω < 0.55 Ω
ID 10.7 A 6.0 A
TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2
3 1 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value ST P11NB40 STP11NB4...
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