STP11NC40

www.DataSheet4U.com N-CHANNEL 400V - 0.44Ω - 9.5A TO-220/TO-220FP PowerMESH™II Power MOSFET TYPE STP11NC40 STP11NC40FP s s s s s STP11NC40, STP11NC40FP VDSS 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω ID 9.5 A 9.5 A(*) Pw 120 W 30 W TYPICAL RDS(on) = 0.44 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s ORDERING INFORMATION SALES TYPE STP11NC40 STP11NC40FP MARKING P11NC40 P11NC40FP PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE January 2002 1/10 STP11NC40, STP11NC40FP ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tj Tstg Parameter STP11NC40 Value STP11NC40FP Unit V V V 9.5 (*) 6 (*) 38 (*) 30 0.24 A A A W W/°C V/ns 2500 V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage sl...