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STP11NM60FD Dataheets PDF



Part Number STP11NM60FD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL Power MOSFET
Datasheet STP11NM60FD DatasheetSTP11NM60FD Datasheet (PDF)

www.DataSheet4U.com STP11NM60FD- STB11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2PAK/D2PAK FDmesh™Power MOSFET (with FAST DIODE) TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD STB11NM60FD-1 VDSS 600 600 600 600 V V V V RDS(on) < < < < 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 11 A 11 A 11 A 11 A 1 3 2 1 3 2 TYPICAL RDS(on) = 0.40Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL .

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www.DataSheet4U.com STP11NM60FD- STB11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2PAK/D2PAK FDmesh™Power MOSFET (with FAST DIODE) TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD STB11NM60FD-1 VDSS 600 600 600 600 V V V V RDS(on) < < < < 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 11 A 11 A 11 A 11 A 1 3 2 1 3 2 TYPICAL RDS(on) = 0.40Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. TO-220 TO-220FP 3 1 3 12 D2PAK I2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDER CODES PART NUMBER STP11NM60FD STP11NM60FDFP STB11NM60FDT4 STB11NM60FD-1 MARKING P11NM60FD P11NM60FDFP B11NM60FD B11NM60FD PACKAGE TO-220 TO-220FP D2PAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE February 2004 1/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP11NM60FD STB11NM60FD STB11NM60FD-1 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -–65 to 150 11 7 44 160 0.88 20 2500 600 600 ±30 11 (*) 7 (*) 44 (*) 35 0.28 STP11NM60FDFP Unit V V V A A A W W/°C V/ns V °C (•)Pulse width limited by safe operating area (1)ISD<11A, di/dt<400A/µs, VDD ID(on) x RDS(on)max, ID = 5.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5.2 1000 208 28 100 3 Max. Unit S pF pF pF pF Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250V, ID = 5.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 11A, VGS = 10V Min. Typ. 20 16 28 7.8 13 40 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V, ID = 11A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 10 15 24 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11A, VGS = 0 ISD = 11A, di/dt = 100A/µs, VDD = 50V (see test circuit, Figure 5) 190 1.1 14.5 Test Conditions Min. Typ. Max. 11 44 1.5 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 Safe Operating for TO-220/I2PAK/D2PAK Safe Operating Area for TO-220FP Thermal Impedance for TO-220/I2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics 4/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 Transconductance Static Drain-source On.


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