UP01213

www.DataSheet4U.com Composite Transistors UP01213 Silicon NPN epitaxial planar type 5 Unit: mm (0.30) 4 1.20±0.05 1.60±0.05 0.20 –0.02 +0.05 0.10±0.02 For digital circuits ■ Features Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead (0.20) 5˚ UNR1213 × 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 −55 to +125 Unit V V mA mW °C °C 1: Base (Tr1) 2: Emitter 3: Base (Tr2) 0 to 0.02 4: Collector (Tr2) 5: Collector (Tr1) SSMini5-F2 Package Marking Symbol: 9L Internal Connection (C1) 5 Tr1 R1 (47 kΩ) R2 R2 (47 kΩ) (47 kΩ) (C2) 4 Tr2 R1 (47 kΩ) 1 (B1) 2 (E) 3 (B2) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −2 mA, f = 200 MH...