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APT50GP60S Dataheets PDF



Part Number APT50GP60S
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description POWER MOS 7 IGBT
Datasheet APT50GP60S DatasheetAPT50GP60S Datasheet (PDF)

www.DataSheet4U.com APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. D3PAK G C C E G E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 26A • 100 kHz operation @ 400V, 41A • SSOA ra.

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www.DataSheet4U.com APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. D3PAK G C C E G E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 26A • 100 kHz operation @ 400V, 41A • SSOA rated G E C MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified. APT50GP60B_S UNIT 600 ±20 ±30 @ TC = 25°C Volts 100 72 190 190A@600V 625 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 500 2 6 2.7 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 2 I CES I GES µA nA 2-2004 050-7434 Rev B 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT50GP60B_S Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 50A 4 5 MIN TYP MAX UNIT 5700 465 30 7.5 165 40 50 190 19 36 83 60 465 837 637 19 36 116 86 465 1261 1058 MIN TYP MAX UNIT °C/W gm ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Operating Area td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RΘJC RΘJC WT Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy R G = 5Ω TJ = +25°C Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 6 µJ Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 50A R G = 5Ω 5 Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 TJ = +125°C µJ THERMAL AND MECHANICAL CHARACTERISTICS Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight .20 N/A 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7434 Rev B 2-2004 TYPICAL PERFORMANCE CURVES 70 60 50 40 30 20 TC=25°C TC=-55°C 10 TC=125°C 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 100 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST <0.5 % DUTY CYCLE VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE APT50GP60B_S 70 60 50 40 30 20 10 0 TC=25°C TC=125°C TC=-55°C VGE = 10V. 250µs PULSE TEST <0.5 % DUTY CYCLE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 VCE=300V 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE=480V IC = 50A TJ = 25°C IC, COLLECTOR CURRENT (A) 80 VCE=120V 60 TJ = -55°C 40 TJ = 25°C TJ = 125°C 20 0 0 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25°C. 250µs PU.


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