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BAS40H Dataheets PDF



Part Number BAS40H
Manufacturers NXP
Logo NXP
Description General-purpose Schottky diode
Datasheet BAS40H DatasheetBAS40H Datasheet (PDF)

www.DataSheet4U.com BAS40H General-purpose Schottky diode in small SOD123F package Rev. 01 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description General purpose Schottky diode, encapsulated in a SOD123F small and flat lead SMD plastic package. 1.2 Features s s s s s Small and flat lead SMD plastic package Flat leads: excellent coplanarity and improved thermal behavior Low capacitance High switching speed Low leakage current 1.3 Applications s Ultra high-speed switching s.

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www.DataSheet4U.com BAS40H General-purpose Schottky diode in small SOD123F package Rev. 01 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description General purpose Schottky diode, encapsulated in a SOD123F small and flat lead SMD plastic package. 1.2 Features s s s s s Small and flat lead SMD plastic package Flat leads: excellent coplanarity and improved thermal behavior Low capacitance High switching speed Low leakage current 1.3 Applications s Ultra high-speed switching s Voltage clamping 1.4 Quick reference data Table 1: Symbol IF VF VR [1] Quick reference data Parameter forward current forward voltage reverse voltage IF = 10 mA [1] Conditions Min - Typ - Max 120 500 40 Unit mA mV V Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors BAS40H General-purpose Schottky diode in small SOD123F package 2. Pinning information Table 2: Pin 1 2 Pinning Description cathode anode [1] Simplified outline Symbol 1 2 sym001 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 3: Ordering information Package Name BAS40H Description plastic surface mounted package; 2 leads Version SOD123F Type number 4. Marking Table 4: BAS40H Marking codes Marking code AJ Type number 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF IFRM IFSM Ptot Tj Tamb Tstg [1] [2] Parameter reverse voltage forward current repetitive peak forward current Conditions Min - Max 40 120 120 200 375 150 +150 +150 Unit V mA mA mA mW °C °C °C tp ≤ 1 s; δ ≤ 0.5 [1] −65 −65 non-repetitive peak forward tp ≤ 10 ms current total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C [2] Tj = 25 °C prior to surge. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9397 750 14968 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 April 2005 2 of 8 Philips Semiconductors BAS40H General-purpose Schottky diode in small SOD123F package 6. Thermal characteristics Table 6: Symbol Rth(j-a) Rth(j-sp) [1] [2] [3] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] [2] Min - Typ - Max 330 70 Unit K/W K/W [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. Soldering point of cathode tab. 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF Parameter forward voltage Conditions IF = 1 mA IF = 10 mA IF = 40 mA IR Cd [1] [1] [1] [1] Min - Typ - Max 380 500 1 1 10 5 Unit mV mV V µA µA pF reverse current diode capacitance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VR = 30 V VR = 40 V VR = 0 V; f = 1 MHz 9397 750 14968 © Koninklijke Philips Electronics N.V. 2005. All rights reserv.


ASF461 BAS40H BL34018


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