GaAs MMIC Low Noise Amplifier for Micro Wave Application
HA22033
GaAs MMIC Low Noise Amplifier for Micro Wave Application
ADE-207-266 (Z) 1st. Edition October 1998 Features
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Description
HA22033
GaAs MMIC Low Noise Amplifier for Micro Wave Application
ADE-207-266 (Z) 1st. Edition October 1998 Features
Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built–in matching circuits (50Ω) Small surface mount package (MPAK–5)
Outline
MPAK–5
This document may, wholly or partially, be subject to change without notice. This Device si sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not
HA22033
Absolute Maximum Ratings (Ta = 25°C)
Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Maximum input power Symbol Vdd Idd Pd Tch Tstg Topr Pin max Ratings 5 6 100 150 –55 to +125 –20 to +70 +15 Unit V mA mW °C °C °C dBm
Electrical Characteristics (Ta = 25°C, Vdd = 2.7V)
Item Quiescent current Power gain Noise figure Symbol Idd PG NF Min — 12 — Typ 1.7 14 1.4 Max 2.5 — 2 Unit mA dB dB Test Conditions No signal f = 1.5 GHz f = 1.5 GHz Pin
Typical Performance (Ta = 25°C, Vdd = 2.7V)
Item VSWR (input) VSWR (output) 3rd order intermodulation distortion Symbol VSWR in VSWR out IM3 Typ 1.5 2.2 50 Unit — — dB Test Conditions f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz, Pin = –30 dBm Pin 4 1
HA22033
Block Diagram in
1.5pF 4 5.6nH...
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