MCH5815

www.DataSheet4U.com Ordering number : ENN7424 MCH5815 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5815 DC / DC Converter Applications Features Package Dimensions 0.25 0.65 2.0 (Bottom view) 0.07 Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3317) and a Schottky Barrier Diode (SBS007M) 2195 contained in one package facilitating high-density mounting. [MOS] 1) Low ON-resistance. 2) Ultrahigh-speed switching. 3) 1.8V drive. [SBD] 1) Short reverse recovery time. 2) Low forward voltage. 2.1 [MCH5815] 0.3 4 5 0.15 1.6 0.25 3 2 1 5 4 0.85 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 1 2 3 (Top view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit -12 ±10 --1.5 --6.0 0.8 --150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QR Any and all SANYO products described or contained herein do not have specifications that can handle application...