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Ordering number : ENN7454
MCH5819
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
MCH5819
DC / DC Converter Applications
Features
•
Package Dimensions
Composite type with a N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage.
0.25 2.1 1.6 0.25
[MCH5819]
0.3 0.15
4
5
0.65 2.0
(Bottom view)
0.07
3
2
1
5
4
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5
0.85
1
2
3
(Top view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 30 ±20 1.4 5.6 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit
Marking : QV
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33004 TS IM TA-100373 No.7454-1/5
MCH5819
Electrical Characteristics at Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=10V VR=10V, f=1MHz IF=IR=100mA See specified Test Circuit. 30 0.35 0.42 20 10 0.40 0.47 200 V V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=10V ID=400mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 1.2 0.85 1.2 230 370 70 15 10 6 3 10 4 2.6 0.6 0.5 0.9 1.2 300 520 30 1 ±10 2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Electrical Connection
5 4
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain
1 2 3
(Top view)
Switching Time Test Circuit
[MOSFET]
VIN 10V 0V VIN PW=10µs D.C.≤1% ID=700mA RL=21.4Ω VDD=15V
trr Test Circuit
[SBD]
Duty≤10% 50Ω 100Ω 10Ω
100mA
10mA
D
VOUT
10µs --5V
100mA
trr
G
MCH5819 P.G 50Ω
S
No.7454-2/5
MCH5819
8V
6V 5V
VDS=10V
Drain Current, ID -- A
Drain Current, ID -- A
1.5
10 V
4V
1.2
1.0
0.8
1.0
VGS=3V
0.5
0.6
0.4
0 0 0.2 0.4 0.6 0.8 1.0
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
800
Drain-to-Source Voltage, VDS -- V IT03097 [MOSFET] RDS(on) -- VGS Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
800 700 600 500 400 300 200 100 0 --60
Gate-to-Source Voltage, VGS -- V IT03098 [MOSFET] RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10
0.7A ID=0.4A
, 0.4A I D=
=4V VGS
=10V , VGS
.7A I D=0
--40
--20
0
20
40
60
--2 5° C
80
0.2
Ta =7 5
100
25°C
120 140
°C
10
Gate-to-Source Voltage, VGS -- V IT03099 [MOSFET] yfs -- ID VDS=10V
Ambient Temperature, Ta -- °C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01
IF -- VSD
Forward Transfer Admittance, yfs -- S
7 5 3 2
2
1.0 7 5 3 2
5°C
= Ta
°C 75
--2 C 5°
Forward Current, IF -- A
0.1 0.01
2
3
5
7 0.1
2
3
5
.