DatasheetsPDF.com

PDTA143T Dataheets PDF



Part Number PDTA143T
Manufacturers NXP
Logo NXP
Description PNP resistor-equipped transistors
Datasheet PDTA143T DatasheetPDTA143T Datasheet (PDF)

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET PDTA143T series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2003 Sep 08 2004 Aug 04 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and.

  PDTA143T   PDTA143T



Document
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET PDTA143T series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2003 Sep 08 2004 Aug 04 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PDTA143T series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor open TYP. − − 4.7 − MAX. −50 −100 − − UNIT V mA kΩ − PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTA143TE PDTA143TEF PDTA143TK PDTA143TM PDTA143TS PDTA143TT PDTA143TU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 39 10 45 E6 TA143T *42(1) *45(1) PDTC143TE PDTC143TEF PDTC143TK PDTC143TM PDTC143TS PDTC143TT PDTC143TU MARKING CODE NPN COMPLEMENT 2004 Aug 04 2 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open SIMPLIFIED OUTLINE, SYMBOL AND PINNING PDTA143T series PINNING TYPE NUMBER PDTA143TS SIMPLIFIED OUTLINE AND SYMBOL PIN 1 2 handbook, halfpage DESCRIPTION base collector emitter 3 2 R1 1 3 MAM352 1 2 3 PDTA143TE PDTA143TEF PDTA143TK PDTA143TT PDTA143TU 1 Top view 2 MDB272 1 2 handbook, halfpage base emitter collector 3 R1 1 3 3 2 PDTA143TM handbook, halfpage 1 2 3 R1 3 1 2 Bottom view MDB268 base emitter collector 3 2 1 2004 Aug 04 3 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IO ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation SOT23 SOT54 SOT323 SOT346 SOT416 SOT490 SOT883 Tstg Tj Tamb Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. THERMAL CHARACTERISTICS SYMBOL Rth j-a SOT23 SOT54 SOT323 SOT346 SOT416 SOT490 SOT883 Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 1 note 1 note 1 note 1 note 1 notes 2 and 3 storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C note 1 note 1 note 1 note 1 note 1 notes .


OVSTRGBAC6 PDTA143T QT100


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)