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DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA143T series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
Product specification Supersedes data of 2003 Sep 08 2004 Aug 04
Philips Semiconductors
Product specification
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION
PDTA143T series
QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor open TYP. − − 4.7 − MAX. −50 −100 − − UNIT V mA kΩ −
PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).
PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTA143TE PDTA143TEF PDTA143TK PDTA143TM PDTA143TS PDTA143TT PDTA143TU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 39 10 45 E6 TA143T *42(1) *45(1) PDTC143TE PDTC143TEF PDTC143TK PDTC143TM PDTC143TS PDTC143TT PDTC143TU MARKING CODE NPN COMPLEMENT
2004 Aug 04
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTA143T series
PINNING TYPE NUMBER PDTA143TS SIMPLIFIED OUTLINE AND SYMBOL PIN 1 2
handbook, halfpage
DESCRIPTION base collector emitter
3
2 R1 1 3
MAM352
1 2 3
PDTA143TE PDTA143TEF PDTA143TK PDTA143TT PDTA143TU
1 Top view 2
MDB272
1 2
handbook, halfpage
base emitter collector
3 R1 1
3
3
2
PDTA143TM
handbook, halfpage
1 2
3 R1 3 1 2 Bottom view
MDB268
base emitter collector
3
2
1
2004 Aug 04
3
Philips Semiconductors
Product specification
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IO ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation SOT23 SOT54 SOT323 SOT346 SOT416 SOT490 SOT883 Tstg Tj Tamb Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. THERMAL CHARACTERISTICS SYMBOL Rth j-a SOT23 SOT54 SOT323 SOT346 SOT416 SOT490 SOT883 Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 1 note 1 note 1 note 1 note 1 notes 2 and 3 storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C note 1 note 1 note 1 note 1 note 1 notes .