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START420
NPN Silicon RF Transistor
• LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESS...
www.DataSheet4U.com
START420
NPN Silicon RF
Transistor
LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V ULTRA MINIATURE SOT343 PACKAGE
SOT343 (SC70) ORDER CODE START420TR BRANDING 420
DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches performance level only achieved with GaAs products before.
APPLICATIONS LNA FOR GSM/DCS, DECT, PDC, PCS, PCN PREDRIVER FOR DECT GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol Vceo Vcbo Vebo Ic Ib Ptot Tstg Tj Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total dissipation, Ts = 101 Storage temperature Max. operating junction temperature Parameter Value 4.5 15 1.5 40 4 180 -65 to 150 150 Unit V V V mA mA mW
oC oC
ABSOLUTE MAXIMUM RATINGS
Rthjs Thermal Resistance Junction soldering point 270
oC/W
July, 3 2002
1/7
START420
ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified)
Symbol Icbo Iebo Hfe NFmin Ga |S21|2 Gms
(1)
Parameter Collector cutoff current Emitter-base cutoff current DC current gain Minimim noise figure NFmin associated gain Insertion power gain Maximum stable gain 1dB compression point Ouput third order intercept point
Test Conditions Vcb = 5V, Ie = 0A Ve...