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START499

ST Microelectronics

NPN Silicon RF Transistor

www.DataSheet4U.com START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION...


ST Microelectronics

START499

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www.DataSheet4U.com START499 NPN Silicon RF Transistor HIGH EFFICIENCY HIGH GAIN LINEAR AND NON LINEAR OPERATION TRANSITION FREQUENCY 42GHz ULTRA MINIATURE SOT343 (SC70) PACKAGE SOT343 (SC70) ORDER CODE START499TR BRANDING 499 DESCRIPTION START499 is a product of the START family that provide the market with a Si state-of-art RF process. Manufactured in St 3rd generation bipolar process, it offers the highest power, gain and efficiency in SOT343 for given breakdown voltage (BVceo). Suitable for a wide range of applications up to 5GHz, it shows a performance level achieved before with GaAs products only. APPLICATIONS PA FOR DECT OR PHS PA STAGE FOR WIRELESS LAN AND BLUETOOTH @ 2.5GHz UHF-VHF PRE POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Symbol Vceo Vcbo Vebo Ic Ib Ptot Tstg Tj Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total dissipation at TS = 60 C Storage temperature Max. operating junction temperature o Parameter Value 4.5 15 1.5 600 32 600 -65 to 150 150 Unit V V V mA mA mW o o C C ABSOLUTE MAXIMUM RATINGS Rthjs Thermal Resistance Junction soldering point 150 oC/W July, 3 2002 1/7 START499 ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified) Symbol Icbo Iebo Hfe G P-1dB IP3 NF Parameter Collector cutoff current Emitter-base cutoff current DC current gain Power gain 1dB compression point Ouput third order intercept point Noise Figure Test Conditions Vcb = 5V, Ie = 0A Veb = 1.5V...




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