STTH302

® STTH302 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 3A 200 V 175 °C 0.75 V 35 ns FEATURES AND BENEFITS s Very low conduction losses s Negligible switching losses s Low forward and reverse recovery times s High junction temperature DESCRIPTION The STTH302 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. DO-201AD STTH302 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF (AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Average forward current TI = 107°C Surge non repetitive forward current tp = 10ms Storage temperature range Maximum operating junction temperature Value 200 δ = 0.5 Sinusoidal 3 130 - 65 to + 175 175 Unit V A A °C °C THERMAL PARAMETERS Symbol Rth (j-a) Junction-ambient* * On infinite heatsink with 10mm lead length. Parameter Value 25 Unit °C/W November 2001 - Ed: 1A 1/5 STTH302 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. IR * Reverse leakage current Tj = 25°C VR = VRRM VF ** Forward voltage drop Tj = 125°C Tj = 25°C IF = 3A Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the maximum conduction losses use the following equations: P = 0.60 x IF(AV) + 0.05 IF2(RMS) Typ. 4 0.66 Max. 3 75 0.95 0.75 Unit µA V ...