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Ordering number : ENN8061
15GN03C
15GN03C
Applications
•
NPN Epitaxial Planar Silicon Transistor
VHF High-frequency Amplifier Applications
VHF, RF, MIXER, OSC, IF amplifier.
Features
• •
High cutoff frequency : fT=1.5GHz typ. High gain : S21e2=13dB typ (f=0.4GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 3 70 200 150 --55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre
2 S21e NF
Conditions VCB=10V, IE=0 VEB=2V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=0.4GHz VCE=3V, IC=2mA, f=0.4GHz
Ratings min typ max 0.1 1 100 1.0 1.5 0.95 0.65 10 13 1.6 1.25 180
Unit µA µA GHz pF pF dB dB
Marking : ZU
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21505AB TS IM TB-00000416 No.8061-1/6
15GN03C Package Dimensions
unit : mm 2018B
0.5
0.4 3
0.16 0 to 0.1
1 0.95 0.95 2 1.9 2.9
0.5
1.5 2.5 0.8 1.1
1 : Base 2 : Emitter 3 : Collector SANYO : CP
100 90
IC -- VCE
0.8mA 0.7mA 0.6mA 0.5mA 0.4mA
80 70
IC -- VBE
VCE=5V
Collector Current, IC -- mA
Collector Current, IC -- mA
80 70 60 50 40 30 20 10 0 0 2 4 6
60 50 40 30 20 10
0.3mA
0.2mA
0.1mA
IB=0
8 10 IT08087
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT08088
Collector-to-Emitter Voltage, VCE -- V
3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
3
f T -- IC
VCE=5V
Gain-Bandwidth Product, f T -- GHz
2 2
VCE=5V
DC Current Gain, hFE
100
1.0
7
7
5 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
100 IT08089
7
5 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7 100 IT08090
No.8061-2/6
15GN03C
3
Cob -- VCB
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
3
Cre -- VCB
f=1MHz
Output Capacitance, Cob -- pF
2
2
1.0
1.0
7
7
5 0.1
2
3
5
7
1.0
2
3
5
7
10
5 0.1
2
3
5
7
1.0
2
3
5
7
10
14
Collector-to-Base Voltage, VCB -- V S21e2 -- I
IT08091 10
Collector-to-Base Voltage, VCB -- V
IT08092
C
NF -- IC
Forward Transfer Gain, S21e -- dB
VCE=5V f=400MHz
7 12
VCE=3V f=400MHz
2
Noise Figure, NF -- dB
5
10
3
8
2
50Ω ZS= pt so =Z ZS
6
4 1.0
1.0 2 3 5 7 10 2 3 5
Collector Current, IC -- mA
250
100 IT08093
7
3
5
7
1.0
2
3
5
7
10
2
3
5
PC -- Ta
Collector Current, IC -- mA
IT08094
Collector Dissipation, PC -- mW
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08095
No.8061-3/6
15GN03C
S Parameters (Common emitter)
VCE=5V, IC=1mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.918 0.816 0.719 0.650 0.603 0.579 0.562 0.557 0.557 0.560 ∠S11 --34.17 --63.46 --87.48 --106.66 --123.45 --137.17 --149.31 --159.59 --168.64 --176.38 S21 3.328 2.833 2.349 1.974 1.709 1.492 1.328 1.197 1.094 1.003 ∠S21 154.00 133.91 118.47 106.31 96.50 88.62 81.55 75.34 70.12 65.13 S12 0.040 0.063 0.075 0.081 0.081 0.078 0.074 0.070 0.068 0.066 ∠S12 67.14 50.52 39.90 33.68 30.41 30.45 30.61 34.97 41.63 50.34 S22 0.963 0.897 0.847 0.816 0.795 0.785 0.779 0.777 0.773 0.773 ∠S22 -9.32 --15.61 --19.59 --22.72 --25.65 --28.56 --31.42 --34.68 --38.02 --41.22
VCE=5V, IC=3mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.799 0.641 0.553 0.512 0.492 0.488 0.487 0.492 0.502 0.508 ∠S11 --55.14 --93.26 --118.80 --136.73 --150.89 --161.99 --171.08 --178.68 174.60 168.93 S21 7.483 5.412 4.036 3.182 2.627 2.244 1.958 1.749 1.575 1.433 ∠S21 141.00 118.03 104.19 94.58 86.95 80.86 75.25 70.37 65.89 61.61 S12 0.033 0.047 0.050 0.052 0.055 0.056 0.059 0.063 0.068 0.078 ∠S12 59.88 44.28 40.23 40.73 44.74 49.28 55.44 62.40 67.82 74.10 S22 0.886 0.773 0.719 0.693 0.683 0.677 0.675 0.675 0.674 0.677 ∠S22 --14.45 --18.84 --21.00 --22.61 --24.93 --27.44 --30.18 --33.31.