N-Channel MOSFET. AO8830 Datasheet

AO8830 MOSFET. Datasheet pdf. Equivalent

Part AO8830
Description Dual N-Channel MOSFET
Feature www.DataSheet4U.com AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Gen.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8830 Datasheet

www.DataSheet4U.com AO8830 Common-Drain Dual N-Channel Enha AO8830 Datasheet
Recommendation Recommendation Datasheet AO8830 Datasheet





AO8830
www.DataSheet4U.com
AO8830
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8830 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AO8830 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8830L is a Green Product ordering option.
AO8830 and AO8830L are electrically identical.
Features
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 27m(VGS = 10V)
RDS(ON) < 30m(VGS = 4.5V)
RDS(ON) < 41m(VGS = 2.5V)
RDS(ON) < 55m(VGS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8 D1/D2
7 S2
6 S2
5 G2
D1
1.6K
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
6
4.8
30
1.5
0.94
-55 to 150
D2
1.6K
S2
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
115
70
Max
83
140
85
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AO8830
AO8830
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=1mA
VGS=4.5V, VDS=5V
VGS=10V, ID=6A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
Forward Transconductance
VDS=5V, ID=6A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=6A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=4.5V, VDS=10V, RL=1.7,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs, VGS=-9V
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs, VGS=-9V
Min
20
±12
0.5
30
Typ
0.6
22
31
25
32
42
21
0.75
290
120
40
1.6
5.2
2.1
1.9
280
972
2.35
2.2
25
8
Max Units
V
1
5 µA
10
V
1V
A
27 m
30 m
41 m
55 m
S
1V
2.5 A
pF
pF
pF
k
nC
nC
nC
ns
ns
µs
µs
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The currentand power rating is based on the t10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 2: Aug 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)