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AOD413Y Dataheets PDF



Part Number AOD413Y
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel MOSFET
Datasheet AOD413Y DatasheetAOD413Y Datasheet (PDF)

www.DataSheet4U.com AOD413Y P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, inside and out. It uses Pb-free die attach and plating material(meets ROHS & Sony 259 specifications). AOD413YL is a Green Pro.

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www.DataSheet4U.com AOD413Y P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, inside and out. It uses Pb-free die attach and plating material(meets ROHS & Sony 259 specifications). AOD413YL is a Green Product ordering option. AOD413Y and AOD413YL are electrically identical. TO-252 D-PAK Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C C Maximum -40 ±20 -12 -12 -30 -12 30 50 25 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C G ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD413Y Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-8A Forward Transconductance VDS=-5V, ID=-12A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=-10mA, V GS=0V VDS=-32V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250 µA VGS=-10V, VDS=-5V VGS=-10V, ID=-12A TJ=125°C -1 -30 36 56 51 16 -0.75 -1 -12 657 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 143 63 6.5 14.1 VGS=-10V, VDS=-20V, ID=-12A 7 2.2 4.1 8 VGS=-10V, VDS=-20V, RL=1.7Ω, RGEN=3Ω IF=-12A, dI/dt=100A/ µs IF=-12A, dI/dt=100A/ µs 12.2 24 12.5 23.2 18.2 45 70 69 -1.9 Min -40 -1 -5 ±100 -3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: Oct 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD413Y TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V 20 -ID (A) 15 15 -3.5V 10 VGS=-3V 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 70 65 Normalized On-Resistance 60 RDS(ON) (mΩ ) 55 50 45 40 35 30 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 150 135 ID=-12A 120 RDS(ON) (mΩ ) 105 90 75 60 45 30 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Ga.


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