AOD438

www.DataSheet4U.com AOD438 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD438 is Pb-free (meets ROHS & Sony 259 specifications). AOD438L is a Green Product ordering option. AOD438 and AOD438L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 85 63 200 30 112 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.2 39 0.8 Max 20 50 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD438 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Br...