AOD480

AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trencVhGSte=c1h0nVo,loIDg=y1a8nAd design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features 1.4 VDS (V) = 30V ID = 25A (VGS = 10V) RDS(ON) <23 mΩ (VGS = 10V) RDS(ON) <33 mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D TO-252 D-PAK Bottom View D D GS SG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±20 25 18 64 12 7 21 11 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16.7 40 4.5 Max 25 50 7 Units V V A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD480 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=24V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Ga...